Ferroelectricity of Hf x Zr 1 −x O 2 thin films fabricated using low temperature process at 300 °CTakashi Onaya,Toshihide Nabatame,Naomi Sawamoto, Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Atsushi OguraThe Japan Society of Applied Physics(2019)引用 23|浏览6暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要