A Zno-Based Resistive Device For Rram Application

Resistive random access memory (RRAM) is considered to be one of the promising candidates for next generation nonvolatile memory, and stable resistive switching (RS) is essential for its high density integration. Here we propose an AIIZnO:CuIAI structure by incorporating Cu atoms in the zinc oxide film, and introducing a thin Ti interlayer between top Al electrode and resistive switching layer. Ti interlayer plays the role of oxygen reservoir, and Cu atoms promote the growth of conductive filaments (CF) in the ZnO film by enhancing local electric field in the vicinity of the Cu atoms. Excellent bipolar resistive switching characteristics has been achieved in this device.