Investigation of Quantum-Dot Characteristic Based on Different Bulk Silicon FinFET Device Models

In this work, we present a kind of new device models based on bulk silicon FinFET for quantum computation with quantum dots. A single quantum dot can be realized with a gate for channel inversion and two spacers for insolation between quantum dot and reservoirs based on FOI FinFET ^[1] . We create P-type device models with single gate and double gates for single quantum-dot and double quantum-dot respectively and investigate the effects on formation of quantum dot with different length of channel and different thickness of spacers by TCAD simulation. We can realize a good quantum-dot structure with different coupling capacitance by controlling the lengths of channel and thickness of spacers.