Scanning capacitance microscopy of TGS − TGS + Cr ferroelectric crystals

The question of the applicability of the scanning capacitive microscopy method for the composite mapping of ferroelectric crystals with the growth periodic structure TGS - TGS + Cr is considered. Contrast images of nominally pure stripes and impurity ones with concentration of Cr+3 similar to 0.08 wt% were obtained. Volt-ampere characteristics were measured, which revealed current increase in the impurity stripes in 1.5-3 times. It was shown that capacitive contrast was formed in the stripes with a gradient of impurity concentration and at the domain boundaries.