Modeling Gain Mechanisms in Amorphous Silicon due to efficient carrier multiplication and trap induced junction modulation
Journal of Lightwave Technology(2019)
摘要
Amorphous materials have low mobility due to their nature of disorder. Surprisingly, some disordered materials showed photocurrent amplification not by conventional photoconductive gain. Recently, amorphous Silicon (a-Si) photodiodes with thin a-Si layer (~40 nm) have shown a gain-bandwidth product of over 2 THz with very low excess noise and also have been used as a gain media in a cascaded syste...
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关键词
Mathematical model,Electron traps,Impact ionization,Electric fields,Photoconductivity,Junctions
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