Reconfigurable Lateral Anionic Heterostructures in Oxide Thin Films Via Lithographically Defined Topochemistry

Laterally structured materials can exhibit properties uniquely suited for applications in electronics, magnetoelectric memory, photonics, and nanoionics. Here, a patterning approach is presented that combines the precise geometric control enabled by lithography with topochemical anionic manipulation of complex oxide films. Utilizing oxidation and fluorination reactions, striped patterns of SrFeO2.5/SrFeO3, SrFeO2.5/SrFeO2F, and SrFeO3/SrFeO2F have been prepared with lateral periodicities of 200, 20, and 4 mu m. Coexistence of the distinct chemical phases is confirmed through x-ray diffraction, optical and photoemission microscopies, and optical spectroscopy. The lateral heterostructures exhibit highly anisotropic electronic transport and also enable transience and regeneration of patterns through reversible redox reactions. This approach can be broadly applied to a variety of metal-oxide systems, enabling chemically reconfigurable lateral heterostructures tailored for specific electronic, optical, ionic, thermal, or magnetic functionalities.