4H-SIC p-type doping determination from secondary electrons imaging

Secondary electron imaging of SiC epi-structures is commonly used as it allows doping topography i.e. the knowledge of the spatial extension of differently doped layers. Determination of the doping level of the layers was not possible until now. The present work presents how to use this technique for 4H-SiC p-type doping determination. This is indeed, possible for specific experimental data analysis and for doping levels higher than 1017cm-3.