Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices

Takehiko Oe,Albert F. Rigosi,Mattias Kruskopf,Bi-Yi Wu,Hsin-Yen Lee,Yanfei Yang,Randolph E. Elmquist,Nobu-Hisa Kaneko,Dean G. Jarrett

IEEE Transactions on Instrumentation and Measurement（2020）

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摘要

Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared with GaAs QHR devices and a 100-Ω standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of a 100-Ω resistor with graphene QHR devices agreed within 5 nΩ/Ω of the values for a 100-Ω resistor obtaine...

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关键词

Graphene,NIST,Annealing,Electrical resistance measurement,Gallium arsenide,Resistance

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