Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Operational testing of prototopye 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from-190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.