Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

P. Nakarmi,I. Ostrovskiy,A.K. Soma,F. Retière,S. Al Kharusi, M. Alfaris,G. Anton,I.J. Arnquist,I. Badhrees,P.S. Barbeau,D. Beck,V. Belov,T. Bhatta, J. Blatchford,P.A. Breur,J.P. Brodsky,E. Brown,T. Brunner,S. Byrne Mamahit, E. Caden,G.F. Cao, L. Cao,C. Chambers,B. Chana,S.A. Charlebois,M. Chiu,B. Cleveland,M. Coon,A. Craycraft, J. Dalmasson,T. Daniels,L. Darroch,A. De St. Croix,A. Der Mesrobian-Kabakian,R. DeVoe,M.L. Di Vacri,J. Dilling, Y.Y. Ding,M.J. Dolinski,L. Doria,A. Dragone,J. Echevers, F. Edaltafar,M. Elbeltagi,L. Fabris,D. Fairbank,W. Fairbank,J. Farine,S. Ferrara,S. Feyzbakhsh,R. Fontaine,A. Fucarino,G. Gallina,P. Gautam,G. Giacomini,D. Goeldi,R. Gornea,G. Gratta,E.V. Hansen,M. Heffner,E.W. Hoppe, J. Hößl,A. House,M. Hughes,A. Iverson,A. Jamil,M.J. Jewell,X.S. Jiang,A. Karelin,L.J. Kaufman, T. Koffas,R. Krücken,A. Kuchenkov,K.S. Kumar,Y. Lan,A. Larson,K.G. Leach,B.G. Lenardo,D.S. Leonard,G. Li,S. Li,Z. Li,C. Licciardi,P. Lv,R. MacLellan, N. Massacret,T. McElroy, M. Medina-Peregrina,T. Michel,B. Mong,D.C. Moore,K. Murray, C.R. Natzke,R.J. Newby,Z. Ning,O. Njoya,F. Nolet,O. Nusair,K. Odgers,A. Odian, M. Oriunno,J.L. Orrell, G.S. Ortega, C.T. Overman,S. Parent,A. Piepke,A. Pocar,J.-F. Pratte,V. Radeka, E. Raguzin,S. Rescia,M. Richman,A. Robinson, T. Rossignol,P.C. Rowson, N. Roy,J. Runge,R. Saldanha,S. Sangiorgio, K. Skarpaas Viii, G. St-Hilaire,V. Stekhanov, T. Stiegler, X.L. Sun,M. Tarka,J. Todd,T.I. Totev,R. Tsang,T. Tsang,F. Vachon, V. Veeraraghavan,S. Viel,G. Visser,C. Vivo-Vilches, J.-L. Vuilleumier, M. Wagenpfeil,T. Wager, M. Walent,Q. Wang,M. Ward,J. Watkins,M. Weber,W. Wei, L.J. Wen,U. Wichoski,S.X. Wu,W.H. Wu,X. Wu, Q. Xia,H. Yang,L. Yang, O. Zeldovich,J. Zhao,Y. Zhou,T. Ziegler

Journal of Instrumentation(2020)

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摘要
Specular reflectivity and relative photodetection efficiency (PDE) of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 um micro-cells have been measured with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 degrees incidence of the three measured SiPMs (series: S13370, numbers 139, 140, and 141) is found to be 30.4+/-1.4 %, 28.6+/-1.3 %, and 28.0+/-1.3 %, respectively. The PDE at normal incidence differs by +/-8 % (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases.
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Dark Matter detectors (WIMPs, axions, etc.),Double-beta decay detectors,Noble liquid detectors (scintillation, ionization, double-phase),Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS, imagers, etc)
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