Ge Condensation Process for High ON/OFF Ratio of SiGe Gate-All-Around Nanowire Tunnel Field-Effect Transistor

Ryoongbin Lee,Junil Lee,Sangwan Kim,Kitae Lee,Sihyun Kim,Soyoun Kim,Yunho Choi,Byung-Gook Park

2019 Silicon Nanoelectronics Workshop (SNW)（2019）

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摘要

In this study, we suggest an improvement method for high ON/OFF ratio and steep subthreshold swing (SS) which are suitable for gate-all-around (GAA) SiGe tunnel field-effect Transistor (TFET). Through technology-computer-aided-design (TCAD) simulation, the effect of Ge condensation on the device performance is examined. Furthermore, SiGe nanowire (NW) channel with high Ge ratio (over 70%) is successfully formed and the advantage of gradually-distributed Ge throughout the SiGe NW is also investigated.

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关键词

SiGe gate-all-around nanowire tunnel field-effect Transistor,steep subthreshold swing,gate-all-around SiGe tunnel field-effect Transistor,technology-computer-aided-design simulation,SiGe nanowire channel,high Ge ratio,SiGe NW,Ge condensation process,SiGe

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