Novel synthesis method for quaternary Cd(Cu, Zn)Se thin films and its characterizations

Nowadays, the search for novel compounds by chemical synthesis is in trend. Herein, we report the deposition of Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) films by facile, industry-oriented chemical synthesis. The Cd1-x-yZnxCuySe thin films were deposited at the optimized growth conditions (temperature = 70 ± 0.1 °C, pH = 10.3 ± 0.1, substrate rotation speed = 70 ± 2 rpm and time = 100 min). As-synthesized thin films were characterized for physical, chemical, topographical and electrical attributes. The study of vibrational modes in Cd1-x-yZnxCuySe thin films was done with the help of Raman spectroscopy. Improvement in surface topography with the integration of Cu2+ and Zn2+ into the CdSe lattice has been noticed by the atomic force microscopy (AFM). The electrochemical impedance spectroscopy revealed lower values of Rs and Rct for x = y = 0.05 composition. Chemical deposition of Cd1-x-yZnxCuySe thin films may offer an excellent way to fabricate quaternary chalcogenide-based absorber materials for solar cells.