Interface control of Al 2 O 3 /AlGaN/GaN structures for MOS-HEMT application Ryota Ochi,Yuji Ando,Shota Kaneki,Tamotsu HashizumeThe Japan Society of Applied Physics（2019）引用 22|浏览4暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
