Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation
Journal of Materials Science & Technology(2020)
摘要
Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
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关键词
Electron beam irradiation,Reduced graphene oxide,Graphene oxide,Memristive heterostructure
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