High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-Near-Zero Electro-Absorption

Yunfei Bo,Erwen Li,Alan X. Wang,Bokun Zhou

international conference on group iv photonics（2019）

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摘要

We designed and demonstrated a high-speed plasmonic-conductive oxide-silicon modulator using epsilon-near-zero electro-absorption, achieving modulation bandwidth of 3.5GHz and 4.5Gb/s data rate. The electro-absorption modulator covers the entire C-band from 1515 nm to 1580 nm wavelength.

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关键词

high-speed,plasmonic-conductive,oxide-silicon,epsilon-near-zero,electro-absorption

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