Monolithic BAW oscillator with conventional QFN packaging

Eloi Marigo,Mohanraj Soundara-Pandian,Jazril Bin,Jamil Din, Nor Shazwani Binti Roslan, Ali Fawzy, Ahmed Yasser,Mohamed Atef,Ayman Ahmed

2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC)(2019)

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摘要
The conceptual design and measurement of a monolithic bulk acoustic wave (BAW) oscillator with conventional plastic QFN packaging is presented. The unique Silterra technology allows the integration of high frequency BAW resonators on top of a standard 0.13µm CMOS technology [1]. The oscillator circuitry is placed under the BAW resonator for smaller form factor and reduction of parasitics. The oscillator has tunable gain and phase and the output signal can be divided by a factor from 8 to 240. The measured phase noise performance of the 2.22GHz oscillator is -85dBc/Hz at 10 kHz offset frequency and a -158dBc/Hz noise floor. The integrated phase jitter from 12 kHz to 20 MHz is $< 360$ fs. This low noise oscillator allows the development of high performance and high frequency signal sources based on MEMS BAW oscillators replacing the traditional LC CMOS solutions.
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关键词
monolithic BAW oscillator,monolithic bulk acoustic wave oscillator,high frequency BAW resonators,oscillator circuitry,BAW resonator,integrated phase jitter,low noise oscillator,high frequency signal sources,MEMS BAW oscillators,plastic QFN packaging,Silterra technology,CMOS technology,phase noise performance,size 0.13 mum,frequency 2.22 GHz,frequency 10.0 kHz,frequency 12.0 kHz to 20.0 MHz
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