Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform

Xiao Gong,Yi-Chiau Huang,Dian Lei,Saeid Masudy-Panah,Shengqiang Xu,Yee-Chia Yeo

international conference on group iv photonics（2019）

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摘要

We demonstrated a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength range and beyond. Both GeSn photo detector and p-channel fin field-effect transistor were realized using this novel architecture.

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关键词

GeSn,optoelectronic integration,2 μm

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