Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs
IEEE Transactions on Electron Devices(2019)
摘要
This article reports on sub-10-nm quaternary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an
in situ
SiN passivation layer and an ultrashort gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (
${t}_{\text {SiN}}$
) of 14 and 22 nm are studied. Low-frequency noise (LFN) measurements of the drain current have been carried out in the linear regime and showed that the
in situ
SiN thickness has no impact on the noise performance.
${S}_{\text {ID}}/{I}\,_{\text {D}}^{{2}}$
in the linear regime dependence over the gate overdrive shows that the channel noise is located under the gate and that the noise is not impacted by the thickness of the
in situ
SiN layer.
更多查看译文
关键词
Logic gates,Silicon compounds,HEMTs,MODFETs,Passivation,Epitaxial layers,Epitaxial growth
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要