Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures

Chemical Physics Letters(2020)

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•Thermal evaporation is used to dope Ga into the V2O5 nanorods at 850 ℃.•Interstitial Ga and Ga2O3 phase affect the luminescence property of V2O5 nanorods.•Light-emission properties of V2O5 nanorods can be modulated by various Ga dopant.
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Key words
Ga-doped V2O5 nanorods,Photoluminescence,Vapor-solid mechanism
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