Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures

Chih-Chiang Wang,Chia-Lun Lu,Fuh-Sheng Shieu,Han C. Shih

Chemical Physics Letters（2020）

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摘要

•Thermal evaporation is used to dope Ga into the V2O5 nanorods at 850 ℃.•Interstitial Ga and Ga2O3 phase affect the luminescence property of V2O5 nanorods.•Light-emission properties of V2O5 nanorods can be modulated by various Ga dopant.

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关键词

Ga-doped V2O5 nanorods,Photoluminescence,Vapor-solid mechanism

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