Mid-Infrared Nano-Tomography Of Topological Insulator Surfaces

F. Mooshammer,F. Sandner, M. A. Huber, M. Zizlsperger, H. Weigand, M. Plankl,C. Weyrich,M. Lanius, J. Kampmeier,G. Mussler,D. Grutzmacher,J. L. Boland,T. L. Cocker,R. Huber

2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)(2019)

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摘要
We retrieve the local dielectric function of a few-nanometer-thick surface layer on the three-dimensional topological insulator (Bi0.5Sb0.5)(2)Te-3 using mid-infrared nano-tomography. Thereby, we identify the contributions of two types of surface states: Band bending leads to an intersubband transition within a massive two-dimensional electron gas, which gives rise to a sharp resonance. Conversely, an additional broadband absorption background may be caused by the topologically protected surface states. Tracing the dielectric response across a nanostructure reveals local changes to the resonance frequency of the intersubband transition, pointing towards nanoscale fluctuations of the doping or the Bi-to-Sb-ratio.
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关键词
topological insulator surfaces,local dielectric function,fewnanometer-thick surface layer,three-dimensional topological insulator,mid-infrared nanotomography,band bending,intersubband transition,two-dimensional electron gas,sharp resonance,topologically protected surface states,dielectric response,resonance frequency,additional broadband absorption background,nanostructure,nanoscale fluctuations,bismuth-antimony doping ratio,Bi0.5Sb0.5Te3
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