Pump - Probe Thz Spectroscopy Study Of Electronic Properties Of Semiconductor Nanowires

THz radiation is a perfect tool for probing electrical properties of semiconductor nanostructures in a contactless way. When applied to semiconductor nanowires, THz probe pulses can drive the oscillations of photoexcited electrons and holes in the form of localized surface plasmon. We used optical pump THz probe spectroscopy to study plasmonic response of charge carriers in GaAs/InxGa1-xAs core/shell nanowires. The carrier lifetimes are about 80-100 ps, depending on the shell composition and the photoexcitation level, while the extracted mobilities reach 3700 cm(2)/Vs at room temperature.