Monolithic Integration Of Gate Driver And P-Gan Power Hemt For Mhz-Switching Implemented By E-Mode Gan-On-Soi Process

Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaN-on-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state V-DS of 100V and on-state I-D of 10 A.