Characterization and Modeling of BTI in SiC MOSFETs

SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.