A dry etching method for 4H-SiC via using photoresist mask

Rui Liu,Hao Wu,Hongdan Zhang, Chen Li,Liang Tian,Ling Li,Jialin Li,Junmin Wu,Yan Pan

Journal of Crystal Growth（2020）

引用 9|浏览8

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摘要

•This study proposes a method of 4H-SiC shallow trench etching process.•Different shallow trench taper angles can be achieved by this method.•A 1200 V/20A SiC SBD device have been fabricated by this technology.

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关键词

A1. Etching,B2. Semiconducting silicon compounds,B3. Bipolar transistors,A1. Substrates

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