Modeling of Void Formation in Phase Change Memory Devices

Adam Cywar,Zachary Woods,SangBum Kim, Matt BrightSky,Norma Sosa,Yu Zhu,Hyeong Soo Kim,Hyung Keun Kim,Chung Lam,Ali Gokirmak,Helena Silva

Solid-State Electronics（2020）

引用 4|浏览63

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摘要

•Modeling of void formation in phase-change materials during crystallization.•Crystallization of as-deposited and melt-quenched amorphous GeSbTe.•Void formation incorporated with nucleation and growth of crystals.•Modeling results compared to example experimental results from phase change devices.

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关键词

Phase-change memory,Void formation,Crystallization,Amorphization,Laser annealing,GeSbTe

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