Angular rotation ion implantation technology in SiC for 4H-SiC junction barrier Schottky rectifiers

Chunyan Jiang,Hao Wu,Liang Tian,Jialin Li,Rui Liu, Tao Zhu,Ling Li,Hongdan Zhang,Qianqian Jiao,Bin Wu,Xiang Qi,Junmin Wu,Yan Pan

Journal of Crystal Growth（2020）

引用 0|浏览12

暂无评分

摘要

•This study proposes an angular rotation ion implantation technology.•This technology could improve the rate of finished product products to be 90%.•With the angle rotation technology, the production cost will be saved effectively.

查看译文

关键词

A1. Ion implantation,A1. Angular rotation,B2. SiC,B3. Junction Barrier Schottky diode

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要