Proof-of-Concept for a Kelvin-Emitter On-Chip Temperature Sensor for Power Semiconductors

European Conference on Power Electronics and Applications(2019)

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摘要
This paper presents the use of a kelvin-emitter resistor as a junction temperature sensor in IGBTs. The kelvin-emitter resistor is placed directly on the IGBT die surface. The resistance is then evaluated using a sensing current injected between the power-emitter and kelvin-emitter terminals. The kelvin-emitter resistor is part of the overall gate resistance of the IGBT. Due to the resistor design, the temperature measured is a local temperature that correlates with the top of the resistor.
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关键词
Reliability,Thermal design,Semiconductor Device,MOSFET,IGBT
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