Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

•An indigenously developed chemical growth process is discussed in this report.•As-grown Cd(Zn, Cu)Se films are polycrystalline with a mixed crystal structure.•Zn2+ and Cu2+ impurity atoms replace Cd2+ from the host lattice.•The band gap is engineered from 2.09 eV to 2.33 eV with high α ≈ 105 cm−1.•Electrical conductivity is enhanced with increased Zn2+ and Cu2+concentration in CdSe.