New SEU modeling method for calibrating target system to multiple radiation particles

IEEE Transactions on Nuclear Science(2020)

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摘要
This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion predicti...
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关键词
Protons,Sensitivity,Single event upsets,Random access memory,Surface treatment
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