Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1

The vast majority of conjugated-polymer-based light emitting field-effect transistors (LEFETs) are characterized by low charge-carrier mobilities typically in the 10(-5) to 10(-3) cm(2) V-1 s(-1) range. Fast carrier transport is a highly desirable characteristic for high-frequency LEFET operation and, potentially, for use in electrically pumped lasers. Unfortunately, high-mobility organic semiconductors are often characterized by strong intermolecular pi-pi interactions that reduce luminescence. Development of new materials and/or device concepts that overcome this hurdle are therefore required. Single organic semiconductor layer based LEFETs that combine high hole mobilities with encouraging light emission characteristics are reported. This is achieved in a single polymer layer LEFET, which is further enhanced through the use of a small-molecule/conjugated polymer blend system that possesses a film microstructure which supports enhanced charge-carrier mobility (3.2 cm(2) V-1 s(-1)) and promising light-emission characteristics (1600 cd m(-2)) as compared to polymer-only based LEFETs. This simple approach represents an attractive strategy to further advance the performance of solution-processed LEFETs.