Superjunction Power Transistors With Interface Charges: A Case Study for GaN

Yunwei Ma
Yunwei Ma
Ming Xiao
Ming Xiao
Ruizhe Zhang
Ruizhe Zhang

IEEE Journal of the Electron Devices Society, pp. 42-48, 2020.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/JEDS.2019.2959713
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Abstract:

Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performance evaluation of SJ devices. This work pr...More

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