Superjunction Power Transistors With Interface Charges: A Case Study for GaN
IEEE Journal of the Electron Devices Society, pp. 42-48, 2020.
Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performance evaluation of SJ devices. This work pr...More
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