Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
IEEE Transactions on Electron Devices(2020)
摘要
In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bilayer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for thre...
更多查看译文
关键词
Integrated circuit modeling,Mathematical model,Resistance,Data models,Switches,Dielectrics,Tin
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要