Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

Weijiang Ni,Xiaoliang Wang,Miaoling Xu,Mingshan Li,Chun Feng,Hongling Xiao,Lijuan Jiang,Wei Li,Quan Wang

IEEE Transactions on Electron Devices（2020）

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摘要

Silicon carbide MOSFET has been commercialized for many years. Its performance is still improving especially for high-frequency application. High-frequency figure-of-merit (HF-FOM) RON* CGD and RON* QGD were used for a comprehensive evaluation of the performance of MOSFET. In this article, SiC planar MOSFETs with different p-body designs were comparatively studied. A new planar MOSFET with buffere...

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关键词

Logic gates,MOSFET,JFETs,Silicon carbide,Doping,Performance evaluation,Capacitance

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