Superior Transient Response to Heavy-Ion Irradiation by N-Channel SOI-iFinFETs

In this paper, we for the first time report the transient response of SOI-iFinFETs under heavy-ion radiation conditions. Using calibrated 3-D TCAD simulations, we analyze the radiation performance of advanced multi-gate devices such as SOI-FinFET and iFinFETs, which conform to 14 nm technology node. The transient response of FinFETs, and iFinFETs with varying number of inserted oxide regions, is reported under heavy-ion irradiation. The effective fin width and gate length scaling has also been reported for FinFET and iFinFETs under heavy-ion irradiation. Our results show that iFinFETs are better suited for heavy-ion radiation environments as compared to FinFETs due to the presence of inserted oxide in between the fin regions. The iFinFETs show up to 28% less peak drain current generated due to heavy-ion with LET = 10 MeV-cm(2)/mg as compared to FinFETs. We also show that iFinFET architecture brings more advantage to radiation performance over conventional FinFETs for narrow fin devices, while gate length scaling has similar radiation response for both FinFET and iFinFETs.