Hidden spin-polarized bands in semiconducting 2H-MoTe2

We present experimental and theoretical studies of the electronic band structure of 2H-MoTe2 at high hydrostatic pressures. Photoreflectance measurements allowed the determination of the pressure coefficient of the direct transitions A and B, which are 2.40(3) and -3.42(18) meV/kbar, respectively. We attribute the sign difference to a strong splitting of the conduction bands with increasing pressure and the presence of hidden spin-polarized states in bulk MoTe2. These results provide direct experimental evidence that the spin-valley locking effect takes place in centrosymmetric transition metal dichalcogenides. [GRAPHICS] IMPACT STATEMENT The experimental confirmation of the presence of spin-polarized states in a centrosymmetric crystal opens the door to explore valleytronic and spintronic phenomena beyond monolayers, including multilayers and heterostructures.