Dynamic Response Of Vo2 Mesa Based Gan Microcantilevers For Sensing Applications

For the first time, dynamic response of GaN microcantilevers with integrated piezoresistive VO2 mesa, as high sensitive deflection transducers have been investigated. The studies are carried out by a direct excitation method using a piezo-chip attached to the bottom of the microcantilever structure, highlighting the utility of these cantilevers as deflection transducers. The VO2 phase was able to detect acoustic waves generated in the Si substrate at resonant frequency with very high sensitivity. A high quality factor of 9400 is recorded at 88 ptorr by these microcantilevers, with an atmospheric quality factor value of 90. The deflection sensitivity is found maximum at the VO2 insulator to metal transition temperature (MIT) temperature.