Well-behaved 4H-SiC PMOSFET with LOCal Oxidation of SiC (LOCOSiC) Isolation Structure and Compromised Gate Oxide for Sub-10 V SiC CMOS Application

Solid-State Electronics（2020）

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摘要

•A well-behaved 4H-SiC PMOSFET device with LOCOSiC isolation structure.•SiC CMOS integrated circuit application.•SiC PMOSFET device behavior and temperature response.•High temperature environment and power electronics application.

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关键词

Silicon carbide,Metal-oxide-semiconductor field effect transistor,Gate oxide,Isolation

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