Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130-nm partially depleted SOI I/O nMOSFETs

An enhanced threshold shift was observed in irradiated (total-ionizing-dose) 130 nm partially depleted silicon-on-insulator I/O nMOSFETs after 3000 s channel hot-carrier stress. This phenomenon was caused by the irradiation-induced additional channel lucky electrons which were injected in the silicon dioxide layers (STI/BOX/gate oxide). Mechanism of formation of greater substrate current in irradiated narrow devices was discussed. Accordingly, a model (enhanced lucky-electron model/Hot carrier injection effect) applied to devices in radiation space environment is established. In addition, the unusual phenomenon in irradiated devices with wide channel was also discussed. (c) 2020 The Japan Society of Applied Physics