Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory
Journal of Alloys and Compounds(2020)
摘要
In this paper, flexible resistive random access memory (ReRAM) operating at 4 V with sol-gel based zirconium oxide (ZrO2) film at 200 °C is demonstrated. The memory performance of solution-processed ReRAM can be improved by utilizing oxygen-annealing, which results in high-quality metal-oxide dielectric films with suppressed oxygen vacancies. The effects of oxygen-annealing on metal-oxide bonding states are investigated to explain the origin of the improved switching performance in ReRAM. In addition, the conduction mechanism underlying the charge transport in solution-processed ReRAM by oxygen-annealing at 200 °C is investigated in a comparison to that of ReRAM annealed at 400 °C in air. The activation energy of solution-processed ReRAM is determined by an Arrhenius plot from temperature-dependent measurements in the range of 120–300 K. Finally, highly stable and robust flexible ReRAM without a passivation film against cyclic bending tests with curvature radiuses of 10 to 5 mm is demonstrated. We believe that this work provides a practical and effective approach by which to improve the device performance of ReRAM with sol-gel based metal-oxide dielectrics through oxygen-annealing at low temperature, compatible with flexible substrates.
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关键词
Flexible ReRAM,Sol-gel based zirconium oxide,Oxygen-annealing,Conduction mechanism,Mechanical stability
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