Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

IEEE Transactions on Nuclear Science(2020)

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摘要
Variability of the solar energetic particle environment is investigated for single-event burnout (SEB) reliability of silicon carbide power metal-oxide-semiconductor field-effect transistors. A probabilistic assessment of failure evaluates the benefits of derating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to...
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关键词
Reliability,Silicon carbide,MOSFET,Threshold voltage,Ions,Probability,Silicon
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