6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)（2019）
摘要
In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (V
f
) compared with DTJBS diode. In order to optimize the V
f
, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower V
f
. Eventually, The V
f
of the device achieves 1.89V while the current is 15A.
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关键词
current conduction capability,Schottky contact,discontinuous TJBS diode,silicon carbide discontinuous trenched junction barrier Schottky diode,silicon carbide DTJBS diode,trenched junction barrier Schottky,forward voltage,TCAD Silvaco,shielding effect,current 15.0 A,voltage 6.5 kV,voltage 1.89 V,SiC
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