Investigation Of 23% Monopoly Screen-Printed Silicon Solar Cells With An Industrial Rear Passivated Contact

We present n-type bifacial solar cells with a rear SiOx/n(+):poly-Si passivating contact where the interfacial SiOx and the n(+):poly-Si layers are fabricated using an industrial inline plasma-enhanced chemical vapor deposition (PECVD) tool. Using a simple solar cell process flow that can be easily adapted for mass production, we demonstrate a peak cell efficiency of 23.05% with a cell open circuit voltage (V-oc) of 694 mV achieved on large-area, screen printed, Czochralski-silicon (Cz-Si) solar cells using commercial fire-through metal pastes. Furthermore, we show that the n(+):poly-Si layers are low-absorbing and can give short-circuit current density (J(sc)) values of up to 41.0 mA/cm(2) after optimization of the rear poly-Si thickness and the front anti-reflective coating.