Preparation Of Iridium Metal Films By Spray Chemical Vapor Imposition

Metal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Jr precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270-430 degrees C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330 degrees C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Jr films decreased with increasing film thickness and reached to values on the order of 10(-6) Omega.cm, which was the same order of the values for bulk Jr metal. Good step coverage was observed for the Ir metal films deposited at 270 degrees C and 330 degrees C. This shows that the simple spray CVD process in air is a good candidate for depositing Jr metal films with good conductivity and step coverage.