A MMIC GaN Power Amplifier Design for 5G Communication System

In this paper, a 3.3 GHz - 3.8 GHz Monolithic Microwave Integrated Circuit (MMIC) power amplifier (PA) using a 0.25μm GaN on SiC high electron mobility transistor (HEMT) technology for 5G communication system is proposed. The stabilization of the circuit structure is composed of parallel connection of a resistance and a capacitance which called RC stabilization circuits. Determination the optimal impedance matching using Load-Pull. This project measured results demonstrated that the average Pout of 18.12 dBm, an average large signal gain of 8.72 dB over frequency band with a great harmonic isolation that the second harmonic is -25.67 dBc@3.55 GHz and the third harmonic is -46.61 dBc@3.55 GHz. The power amplifier chip is integrated into a 1.0mm×2.6mm QFN package including RF pad.