Group-V dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)(2019)

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摘要
CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.
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关键词
group-V dopant incorporation,photovoltaic device performance,carrier lifetime,high hole density,group-V dopants,CdSeTe-CdTe hole density,thin film processes,CdSeTe-CdTe
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