Group-V dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)(2019)
摘要
CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.
更多查看译文
关键词
group-V dopant incorporation,photovoltaic device performance,carrier lifetime,high hole density,group-V dopants,CdSeTe-CdTe hole density,thin film processes,CdSeTe-CdTe
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要