Analysis of Doping Anisotropy in Multisectorial Boron-Doped HPHT Diamonds
Materials Today Communications（2020）
摘要
•A set of multisectorial HPHT diamonds was precisely investigated by admittance spectroscopy from 25 to 450 K.•C–V concentration of free charge carriers in one crystal differs by more than 50 times depending on the growth face.•For the first time various activation energies for boron were obtained for sectors of a single-crystal diamond plate.
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关键词
Boron-doped diamond,HPHT,Multisectorial,Admittance spectroscopy,Charge carrier concentration,Activation energy
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