Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
2019 IEEE International Electron Devices Meeting (IEDM)(2019)
摘要
In this paper, we investigate the influence of negative gate stress on threshold voltage V
TH
instabilities in GaN-on-Si devices. This study has been carried out by using ultra-fast Measurement-Stress-Measurement (MSM) procedure on GaN-on-Si E-mode MOSc-HEMTs (Enhancement-mode MOS-channel HEMTs) for different gate lengths L
G
. NBTI transients at different temperatures and complementary ToF-SIMS analysis reveal the influence of two trap populations involved on V
TH
instabilities, both of them are related to the C
N
acceptor traps. The first one is close to the interface between GaN and Al
2
O
3
gate oxide due to N-vacancies induced by the dry etching process, the second one is likely to be related to GaN:C layer. NBTI transients also exhibit a dependence with L
G
, which is consistent with the E-field distribution of the gate region obtained by TCAD simulations at different gate stress voltages, and confirm the proximity of a C
N
trap population to the gate oxide.
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关键词
negative gate stress,GaN-on-Si devices,GaN-on-Si E-mode MOSc-HEMT,gate lengths,gate oxide,GaN:C layer,gate stress voltages,nBTI degradation,NBTI transients,enhancement-mode MOS-channel HEMT,ultra-fast measurement-stress-measurement,complementary ToF-SIMS analysis,acceptor traps,N-vacancies,dry etching process,E-field distribution,TCAD simulations,GaN-Si,Al2O3,GaN:C
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