Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET

The ferroelectric-HfO 2 based FET (FeFET) is a promising candidate for emerging memories. Imprint, a unique reliable phenomenon of ferroelectric (FE) materials, has been regarded as a major issue for memory operation. So far, most studies about imprint of FE-HfO 2 have been conducted only on capacitors, which, however, limit experimental options. In this paper, imprint and its recovery of HfO 2 based FeFET is reported for the first time. We use comprehensive electrical measurements on both FE capacitors and FeFETs, as well as simulation of charge trapping behavior. We conclude the strong effect of charge trapping is responsible for imprint and its recovery. In addition, simulation results propose a criterion of defect density to solve imprint.