GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

O. Romanyuk,I. Gordeev,A. Paszuk,O. Supplie, J.P. Stoeckmann,J. Houdkova,E. Ukraintsev, I. Bartoš,P. Jiříček,T. Hannappel

Applied Surface Science（2020）

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摘要

•GaP/Si(0 0 1) heterostructures were prepared by MOVPE and characterized by XPS.•Gas cluster ion beam sputtering (GCIB) was applied for buried interface study.•Low sputtering rate is required for the sputtering with a low surface damage.•Formation of metallic Ga phase cannot be avoided.•Interface contributions to P2p and Si2p core level peaks were resolved.

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关键词

GaP/Si heterostructure,Buried interface analysis,XPS,Depth profiling,Gas cluster ion beam sputtering,Interface core level shifts

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