Abnormal Silicon-Germanium (SiGe) Epitaxial Growth in FinFETs

Talapady Srivatsa Bhat, Wen Zhi Gao,Shashidhar Shintri, Brad Chen,Hsien-Ching Lo,Jianwei Peng,Yi Qi, Michael Willeman,Shiv Kumar Mishra,Nuh Yuksek

IEEE Transactions on Semiconductor Manufacturing（2020）

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摘要

In an advanced complementary metal-oxide-semiconductor (CMOS) technology node, small nano-scopic defects tend to have a significant impact on the yield and reliability of the final product. As the technology advances in fin field-effect-transistors (FinFETs), it has become increasingly challenging to control the extent of defects while also ensuring that the desired processing parameters are in pl...

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关键词

Epitaxial growth,FinFETs,Silicon germanium,Silicon,Surface treatment,Lattices,Dielectrics

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